Abstract:

Memristive devices have attracted great attention in recent years for their application potential in memory and neuromorphic technologies. The information in these devices is stored in form of different resistance states, offering binary, multibit or even analog data storage. These characteristics combined with their non-volatility make memristive devices attractive candidates for embedded applications for the internet of things or as synapses in artificial neural networks.

This tutorial focuses on the most common class of memristive devices: redox-based resistive switching devices (ReRAMs). It consists of four parts: First, the basic switching behavior of these devices will be reviewed. Second, the current understanding of the physical processes will be explained. Based on the device physics, compact models will be derived and the open issues will be discussed. In particular, the impact of the device physics on computation-in-memory applications will be highlighted. Finally, the tutorial comprises an on-site training on different compact models, which will be made available for the attendees in MATLAB and Verilog-A.

Biographies

• Stephan Menzel

  is a senior scientist at the Peter Gruenberg Institute (PGI-7), Forschungszentrum Juelich, Germany. He received his diploma degree in electrical engineering in 2006, and his Ph.D. degree in electrical engineering in 2012, both from RWTH Aachen University, Germany. Since 2012, he joined the PGI-7 at Forschungszentrum Juelich, Germany, as the head of the simulation and modeling group and holds a permanent position. He received the Borchers medal in 2012 from RWTH Aachen University. Stephan Menzel is an associate editor of Scientific Reports, member of the IEEE and the Royal Society of Chemistry. His current research interest are the modeling and simulation of redox-based resistive switching devices. On this topic, he has authored and co-authored 7 book chapters, over 100 journal and conference presentations, and gave 19 invited talks.